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APT5024SVR
500V 22A 0.240
POWER MOS V(R)
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. * Faster Switching * Lower Leakage * 100% Avalanche Tested * Surface Mount D3PAK Package
G S
D3PAK
D
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS V GSM PD T J,TSTG TL IAR E AR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT5024SVR UNIT Volts Amps
500
RY A IN IM
MIN
22 88 20 30 280 2.24
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor
Volts Watts W/C C Amps mJ
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
-55 to 150 300 22 30 1210
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions TYP MAX UNIT Volts Amps
Drain-Source Breakdown Voltage (V GS = 0V, ID = 250A) On State Drain Current
2
PR
EL
4
500 22 0.24 25 250 100 2 4
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 I D[Cont.])
Ohms A nA Volts
050-5529 Rev -
Zero Gate Voltage Drain Current (VDS = VDSS , VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 V DSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadera Nord
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Q gs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT5024SVR
Test Conditions V GS = 0V VDS = 25V f = 1 MHz VGS = 10V V DD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V V DD = 0.5 VDSS ID = ID[Cont.] @ 25C R G = 1.6 MIN TYP MAX UNIT
3400 470 180 138 19 65 11 10 44 7
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM V SD t
rr
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
RY
MIN
TYP
MAX
UNIT Amps Volts ns C
A IN IM
415 6.6
MIN TYP
22 88 1.3
(Body Diode) (VGS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dlS /dt = 100A/s)
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s)
THERMAL CHARACTERISTICS
Symbol R JC RJA Characteristic Junction to Case
EL
MAX
UNIT C/W
PR
0.45 40
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 5.00mH, R = 25, Peak I = 22A j G L
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
D PAK Package Outline
Drain (Heat Sink)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 1.04 (.041) 1.15 (.045) 13.41 (.528) 13.51 (.532)
3
Revised 4/18/95
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs} 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.98 (.078) 2.08 (.082)
1.27 (.050) 1.40 (.055)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
050-5529 Rev -
Source Drain Gate Dimensions in Millimeters (Inches)

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